Noise-Induced Resistance Broadening in Resistive Switching Memory-Part I: Intrinsic Cell Behavior

被引：40

作者：

Ambrogio, Stefano ^{[1
]}

Balatti, Simone ^{[1
]}

McCaffrey, Vincent ^{[2
]}

Wang, Daniel C. ^{[2
]}

Ielmini, Daniele ^{[1
]}

机构：

[1] Politecn Milan, Dipartimento Elettron Informaz & Bioingn, Italian Univ Nanoelect Team, I-20133 Milan, Italy

[2] Adesto Technol, Sunnyvale, CA 94089 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 11期

关键词：

1/f noise; low-frequency noise; memory reliability; random telegraph noise (RTN); reliability modeling; resistive switching memory (RRAM); STATISTICAL FLUCTUATIONS;

D O I：

10.1109/TED.2015.2475598

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Resistive-switching memory (RRAM) is attracting a widespread interest for its outstanding properties, such as low power, high speed, and good endurance. A crucial concern for RRAM is the current fluctuation, which induces significant broadening of resistance levels in single-bit and multilevel applications. This paper addresses low-frequency fluctuations focusing on 1/f and random telegraph noise contributions in intrinsic, i.e., typical, cells. The current fluctuations are studied in both the time and frequency domains, and the analytical models are presented to predict the resistance broadening for different RRAM states. Finally, the resistance dependence of noise and broadening is studied with the support of a 3-D finite-element model.

引用

页码：3805 / 3811

页数：7

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