Characterization of silicon/oxide/nitride layers by x-ray photoelectron spectroscopy

被引：34

作者：

Hansch, W ^{[1
]}

Nakajima, A ^{[1
]}

Yokoyama, S ^{[1
]}

机构：

[1] Hiroshima Univ, Res Ctr Nanodevices & Syst, Higashihiroshima 739, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 11期

关键词：

D O I：

10.1063/1.124747

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Core-level intensities for Si 2p, Si 2s, O 1s, and N 1s were measured by x-ray photoelectron spectroscopy in bulk samples of silicon, SiO2 and Si3N4. A complete and consistent set of intensity ratios is given and applied for calculations of thickness and stoichiometry in thin Si/oxide/nitride layers, which can be used for gate dielectrics in advanced metal-oxide-semiconductor field-effect transistor fabrication. (C) 1999 American Institute of Physics. [S0003-6951(99)03037-5].

引用

页码：1535 / 1537

页数：3

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