Ge1-xSnx Materials: Challenges and Applications

被引：32

作者：

Loo, R. ^{[1
]}

Vincent, B. ^{[1
]}

Gencarelli, F. ^{[1
,2
]}

Merckling, C. ^{[1
]}

Kumar, A. ^{[1
,3
]}

Eneman, G. ^{[1
]}

Witters, L. ^{[1
]}

Vandervorst, W. ^{[1
,3
]}

Caymax, M. ^{[1
]}

Heyns, M. ^{[1
,2
]}

Thean, A. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Met & Mat Engn MTM, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, Dept Nucl & Radiat Phys, B-3001 Louvain, Belgium

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2013年 / 2卷 / 01期

基金：

日本学术振兴会;

关键词：

STRAINED GE; SI; MOBILITY; BUFFER; SEMICONDUCTORS; RELAXATION; SI(100); GROWTH; LAYERS;

D O I：

10.1149/2.039301jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ge1-xSnx is receiving a growing interest in the semiconductor community as the material properties are interesting for both electrical and optical device applications. In this contribution we discuss the potential of Ge1-xSnx for future electrical device applications. Further, we will briefly review its fabrication by means of Chemical Vapor Deposition and discuss the structural material properties and its stability against thermal treatments. (C) 2012 The Electrochemical Society. All rights reserved.

引用

页码：N35 / N40

页数：6

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