Investigation of Amplified Spontaneous Emission in Quantum Dot Semiconductor Optical Amplifier in Presence of Second Excited State

被引：0
|
作者：
Razaghi, Mohammad [1 ]
Izadyar, Seyed Mohsen [2 ]
Madanifar, Kazhal Alsadat [3 ]
机构：
[1] Univ Kurdistan, Sch Engn, Elect Dept, Sanandaj, Iran
[2] Univ Kurdistan, Sch Sci, Phys Dept, Sanandaj, Iran
[3] Nirooye Gharb Co, Telecommun Dept, Kermanshah, Iran
来源：
17TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES NUSOD 2017 | 2017年
关键词：
DYNAMICS; GAIN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, amplified spontaneous emission (ASE) in quantum dot semiconductor optical amplifier (QDSOA) is investigated. The presented theoretical model is based on set of rate equations that consider all possible carriers transitions including the second excited state (ES2) transition. These coupled equations are solved numerically. It is illustrated that the obtained ASE spectrum has three peeks which are related to ground, first excited and second excited states. Furthermore, optical gain for 500 fs Gaussian input pulse train is calculated. Based on the results, it is shown that in presence of ES2, gain recovery time and noise figure (NF) are reduced and the QDSOA can be used for ultra-high bit-rate signal processing (up to 450Gbps).
引用
收藏
页码：37 / 38
页数：2
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