Growth of Different Microstructure of MoS2 through Controlled Processing Parameters of Chemical Vapor Deposition Method

被引：1
|
作者：
Kumar, Rahul [1 ]
Goel, Neeraj [1 ]
Kumar, Mahesh [1 ]
机构：
[1] Indian Inst Technol Jodhpur, Dept Elect Engn, Jodhpur, Rajasthan, India
来源：
2019 IEEE 5TH INTERNATIONAL CONFERENCE FOR CONVERGENCE IN TECHNOLOGY (I2CT) | 2019年
关键词：
Layered materials; MoS2; 2D materials; CVD; Sulfurization;
D O I：
10.1109/i2ct45611.2019.9033600
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The anisotropic bonding in layered materials crystallize to form different structure such as smooth films, nanotubes, and fullerene-like nanoparticles. Here, the growth of different microstructure of MoS2 via chemical vapor deposition (CVD) method through controlled processing parameters is reported. Scanning electron microscopy and Raman spectroscopy ascertained the MoS2 on insulating substrate (SiO2/Si). It was observed that poor sulfur environment and slow vapor flow were unable to induce complete transition from MoO3-x to MoS2 and formed intermediate MoO2. The MoS2 and MoO2/MoS2 heterostructure were synthesized via single step. In addition, by adjustment of heating rate with temperature of centre zone and vapor flow, flower like structure of MoS2 was achieved.
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页数：3
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