The effect of blocking layer of Al2O3 on thermal stability and electrical properties of HfO2 dielectric films deposited on SiGe layer

被引：2
作者：
Cheng, Xinhong [1 ]
He, Dawei [2 ]
Song, Zhaorui [2 ]
Yu, Yuehui [2 ]
Shen, DaShen [3 ]
机构：
[1] Wenzhou Univ, Wenzhou 325027, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
[3] Univ Alabama, Huntsville, AL 35899 USA
来源：
MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 09期
基金：
美国国家科学基金会;
关键词：
gate dielectrics; HfO2; blocking layer; Al2O3;
D O I：
10.1016/j.mee.2008.06.008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
HfO2 dielectric films with a blocking layer (BL) of Al2O3 on Si0.8Ge0.2 were treated with rapid thermal annealing process. The effect of BL on thermal stability and electrical properties was reported. X-ray photoelectron spectroscopy suggested that BL could suppress the further growth of the interfacial layer composed of SiOx and GeOx, and lead to the decomposition of GeOx, and the saturation of O vacancy in SiOx structure. High-resolution transmission electron microscopy indicated that BL would keep HfO2 amorphous after annealed treatment. Electrical measurements indicated that there was no stretch-out in capacitance-voltage curves, the accumulation region was flat, and leakage current was reduced for the sample with BL. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：1888 / 1891
页数：4
相关论文
共 13 条
[1]   Interfacial characteristics of N-incorporated HfAlO high-k thin films [J].
Cho, MH ;
Moon, DW ;
Park, SA ;
Kim, YK ;
Jeong, K ;
Kang, SK ;
Ko, DH ;
Doh, SJ ;
Lee, JH ;
Lee, NI .
APPLIED PHYSICS LETTERS, 2004, 84 (25) :5243-5245
[2]   Interfacial characteristics of HfO2 films grown on strained Si0.7Ge0.3 by atomic-layer deposition [J].
Cho, MH ;
Chang, HS ;
Moon, DW ;
Kang, SK ;
Min, BK ;
Ko, DH ;
Kim, HS ;
McIntyre, PC ;
Lee, JH ;
Ku, JH ;
Lee, NI .
APPLIED PHYSICS LETTERS, 2004, 84 (07) :1171-1173
[3]   Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition [J].
Cho, MH ;
Roh, YS ;
Whang, CN ;
Jeong, K ;
Nahm, SW ;
Ko, DH ;
Lee, JH ;
Lee, NI ;
Fujihara, K .
APPLIED PHYSICS LETTERS, 2002, 81 (03) :472-474
[4]   Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition [J].
Johnson, RS ;
Lucovsky, G ;
Baumvol, I .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2001, 19 (04) :1353-1360
[5]   Controlling interfacial reactions between HfO2 and Si using ultrathin Al2O3 diffusion barrier layer [J].
Katamreddy, Rajesh ;
Inman, Ronald ;
Jursich, Gregory ;
Soulet, Axel ;
Takoudis, Christos .
APPLIED PHYSICS LETTERS, 2006, 89 (26)
[6]   Characteristics of ultrathin HfO2 gate dielectrics on strained-Si0.74Ge0.26 layers [J].
Lee, JH ;
Maikap, S ;
Kim, DY ;
Mahapatra, R ;
Ray, SK ;
No, YS ;
Choi, WK .
APPLIED PHYSICS LETTERS, 2003, 83 (04) :779-781
[7]   KINETICS AND MECHANISM OF OXIDATION OF SIGE - DRY VERSUS WET OXIDATION [J].
LEGOUES, FK ;
ROSENBERG, R ;
MEYERSON, BS .
APPLIED PHYSICS LETTERS, 1989, 54 (07) :644-646
[8]   Electrical properties of ZrO2 gate dielectric on SiGe [J].
Ngai, T ;
Qi, WJ ;
Sharma, R ;
Fretwell, J ;
Chen, X ;
Lee, JC ;
Banerjee, S .
APPLIED PHYSICS LETTERS, 2000, 76 (04) :502-504
[9]   Suppression of parasitic Si substrate oxidation in HfO2-ultrathin-Al2O3-Si structures prepared by atomic layer deposition -: art. no. 252110 [J].
Park, M ;
Koo, J ;
Kim, J ;
Jeon, H ;
Bae, C ;
Krug, C .
APPLIED PHYSICS LETTERS, 2005, 86 (25) :1-3
[10]   OXIDATION OF CE(100) AND GE(111) SURFACES - AN UPS AND XPS STUDY [J].
PRABHAKARAN, K ;
OGINO, T .
SURFACE SCIENCE, 1995, 325 (03) :263-271
12