Near-Infrared Organic Photodiodes

被引:34
作者
Arca, Francesco [1 ,2 ]
Sramek, Maria [1 ]
Tedde, Sandro Francesco [1 ]
Lugli, Paolo [2 ]
Hayden, Oliver [1 ]
机构
[1] Siemens AG, Corp Technol, D-91052 Erlangen, Germany
[2] Tech Univ Munich, Inst Nanoelect, D-80333 Munich, Germany
关键词
Near-infrared; organic; photodiode; semiconductor; sensor; PHOTOVOLTAIC PERFORMANCE; ELECTRON-TRANSFER; CHARGE-TRANSPORT; SOLAR-CELLS; POLYMER; DEPENDENCE; DYNAMICS; MOBILITY; FILMS; FIELD;
D O I
10.1109/JQE.2013.2285158
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Organic photodiodes (OPDs) are attractive as solution-processed devices for sensing applications. Industrial and medical sensors often have the requirement to operate in the near-infrared (NIR) spectrum between 650 and 900 nm and are ideally visible-blind. Due to the tailored spectral sensitivity of the organic semiconductors, OPDs are attractive as filter-free solid-state alternative. In addition, the large active areas of the OPDs potentially allow fabricating lens-free light-barrier and reflective sensors. In this paper, we discuss different approaches toward NIR sensitive OPDs with a large active area up to 1 cm(2) applying polymers and small molecules as light absorbers. We demonstrate that with layer stacks optimized to the solution-processed semiconductor properties photodiodes with bulk heterojunctions with a minimum external quantum efficiency peak >40% in the NIR and a rectification ratio of similar to 10(5) can be achieved, which match industrial sensing requirements.
引用
收藏
页码:1016 / 1025
页数:10
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