Synthesis of cyano-polycarbosilane and investigation of its pyrolysis process

被引:23
作者
Chen, Dou [1 ,2 ]
Mo, Gaoming [2 ]
Qian, Junmin [1 ]
He, Liu [2 ]
Huang, Qing [2 ]
Huang, Zhengren [2 ]
机构
[1] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Engn Lab Adv Energy Mat, Ningbo 315201, Peoples R China
基金
中国国家自然科学基金; 中国科学院院长基金特别;
关键词
Polycarbonsilane; Acrylonitrile; Hydrosilylation; Ceramic yield; SILICON-CARBIDE FIBER; POLYMER-DERIVED CERAMICS; CROSS-LINKING; HYDROSILYLATION; CONVERSION; TEMPERATURE; PRECURSOR; ACRYLONITRILE; MECHANISMS; RESISTANT;
D O I
10.1016/j.jeurceramsoc.2020.06.039
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Polycarbonsilane (PCS) is an important precursor of silicon carbide (SiC) fibers and ceramics. The ceramic yield of PCS is relatively low, about 60 %, which may bring some deficiencies in its applications. In this work, a novel precursor cyano-polycarbosilane (PCSCN) is synthesized by hydrosilylation reaction between PCS and acrylonitrile using a rhodium-containing catalyst, although acrylonitrile is generally not easy for hydrosilylation. After introducing tiny amounts of cyano (-C equivalent to N) groups into the PCS molecules, the ceramic yield of PCSCN can increase largely to over 80 %. The ceramization mechanism of PCSCN is investigated by FTIR, TG, XPS, ESR, NMR, Raman and XRD analyses. It is found that some crosslinking structures in PCSCN are formed between Si-H bonds and-C<^>N groups from about 200 degrees C, which can be responsible for the high ceramic yield. The existence of a little more N, O and free C elements in the pyrolysis products may inhibit the growth of crystalline beta-SiC. Moreover, the PCSCN precursor can also be melt-spun into continuous fibers by tailoring its molecular weight and softening point. The oxidized PCSCN fiber with relatively low oxygen content can be pyrolyzed without melting, and the final SiC fiber with an oxygen content as low as 8.5 % is obtained.
引用
收藏
页码:5226 / 5237
页数:12
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