3-D Analytical Modeling of Dual-Material Triple-Gate Silicon-on-Nothing MOSFET

被引：19

作者：

Banerjee, Pritha ^{[1
]}

Sarkar, Subir Kumar ^{[1
]}

机构：

[1] Jadavpur Univ, Dept Elect & Telecommun Engn, Kolkata 700032, India

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 02期

关键词：

Dual-material triple gate (DMTG); DIBL; short-channel effects (SCEs); silicon-on-nothing (SON) MOSFETS; subthreshold swing; threshold voltage roll-off; SOI MOSFETS; THRESHOLD VOLTAGE;

D O I：

10.1109/TED.2016.2643688

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 3-D analytical model of a new structure, namely, dual-material triple-gate silicon-on-nothing MOSFET is proposed in this paper. 3-D Poisson's equation with proper boundary conditions was solved to obtain the surface potential variation of the structure considering the popular parabolic potential approximation, and the threshold voltage and electric field were calculated for the model. The proposed model's immunity to the various short-channel effects, such as threshold voltage roll-off, Drain-Induced Barrier Lowering (DIBL), and subthreshold swing, are also examined, and the impact of the various device parameters on the performance of the device is studied. The 3-D simulated results obtained using ATLAS, a device simulator from Silvaco, validate the analytical results obtained for this structure.

引用

页码：368 / 375

页数：8

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