Observation of T2-like coherent optical phonons in epitaxial Ge2Sb2Te5/GaSb(001) films

被引：11

作者：

Shalini, A. ^{[1
]}

Liu, Y. ^{[1
]}

Al-Jarah, U. A. S. ^{[1
]}

Srivastava, G. P. ^{[1
]}

Wright, C. D. ^{[2
]}

Katmis, F. ^{[3
]}

Braun, W. ^{[3
,4
]}

Hicken, R. J. ^{[1
]}

机构：

[1] Univ Exeter, Sch Phys & Astron, Exeter EX4 4QL, Devon, England

[2] Univ Exeter, Sch Engn Comp & Math, Exeter EX4 4QF, Devon, England

[3] Paul Drude Inst Solid State Elect, D-10117 Berlin, Germany

[4] Createc Fischer & Co GmbH, D-74391 Erligheim, Germany

来源：

SCIENTIFIC REPORTS | 2013年 / 3卷

基金：

英国工程与自然科学研究理事会;

关键词：

PHASE-CHANGE; CARRIER DYNAMICS; THZ PHONONS;

D O I：

10.1038/srep02965

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The phonon spectrum of Ge2Sb2Te5 is a signature of its crystallographic structure and underlies the phase transition process used in memory applications. Epitaxial materials allow coherent optical phonons to be studied in femtosecond anisotropic reflectance measurements. A dominant phonon mode with frequency of 3.4 THz has been observed in epitaxial Ge2Sb2Te5 grown on GaSb(001). The dependence of signal strength upon pump and probe polarization is described by a theory of transient stimulated Raman scattering that accounts for the symmetry of the crystallographic structure through use of the Raman tensor. The 3.4 THz mode has the character of the 3 dimensional T-2 mode expected for the Oh point group, confirming that the underlying crystallographic structure is cubic. New modes are observed in both Ge2Sb2Te5 and GaSb after application of large pump fluences, and are interpreted as 1 and 2 dimensional modes associated with segregation of Sb.

引用

页数：6

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