Study of Covalency in GaSb under High Pressure

被引：0
|
作者：
Shareef, Faisal M. [1 ]
Sarwan, Madhu [1 ]
Shukoor, Abdul, V [1 ]
Bhardwaj, Purvee [1 ]
Singh, Sadhna [1 ]
机构：
[1] Barkatullah Univ, Dept Phys, High Pressure Res Lab, Bhopal 462026, India
来源：
PROCEEDING OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN APPLIED PHYSICS & MATERIAL SCIENCE (RAM 2013) | 2013年 / 1536卷
关键词：
High pressure; Phase transition; Semiconductors; ELASTIC BEHAVIOR; PHASE-TRANSITION; SEMICONDUCTORS; DEPENDENCE; CONSTANTS;
D O I：
10.1063/1.4810244
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The structural phase transition and relative volume change of partially covalent GaSb compound has been investigated by means of two different models (i) interaction potential model (IPM) (ii) modified interaction potential model (MIPM) which includes covalency effects in the previous model. It is found that the inclusion of covalency in MIPM has improved the results and shows a good agreement with available experimental data.
引用
收藏
页码：349 / 350
页数：2
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