Low resistivity p+ diamond (100) films fabricated by hot-filament chemical vapor deposition

被引：32

作者：

Ohmagari, S. ^{[1
]}

Srimongkon, K. ^{[1
,2
]}

Yamada, H. ^{[1
]}

Umezawa, H. ^{[1
]}

Tsubouchi, N. ^{[1
]}

Chayahara, A. ^{[1
]}

Shikata, S. ^{[1
]}

Mokuno, Y. ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Ikeda, Osaka 5638577, Japan

[2] Khon Kaen Univ, Fac Sci, Dept Phys, Khan Kaen 40002, Thailand

来源：

关键词：

Diamond; HFCVD; B-doping; TEM; RSM; Hall; TEMPERATURE; GROWTH; SUBSTRATE; CRYSTALS;

D O I：

10.1016/j.diamond.2015.06.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

By hot-filament (HF) chemical vapor deposition (CVD), heavily boron (B)-doped single-crystal diamond (100) films were fabricated and their structural and electrical properties were studied. We did not observe the soot formation, which is frequently observed and limits the performances in the case of microwave plasma (MWP) CVD. The 1:3 concentration was successfully controlled over the range from 10(19) to 10(31) cm(-3). Hillock-free films were obtained, whose mean surface roughness measured by atomic force microscopy (AFM) was less than 0.1 nm. From the reciprocal space mapping (RSM) around 113 diamond reflection, it was revealed that the films possess the smaller lattice expansion than that expected from the Vegard's law. The room-temperature resistivity was decreased lower than 1 m Omega.cm for B concentration similar to 10(21) cm(-3). These results indicate that the HFCVD possesses large potential for fabricating the device-grade p(+) diamond. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：110 / 114

页数：5

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