Small Die Area Capacitive Cross-Coupled Injection-Locked Frequency Divider

被引:0
作者
Lai, Wen-Cheng [1 ]
Jang, Sheng-Lyang [1 ]
Fang, Meng-Yan [1 ]
机构
[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei, Taiwan
来源
2017 2ND IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM) | 2017年
关键词
CMOS; 3D inductor; divide-by-2; capacitive cross-coupled injection-locked frequency divider; FOM; WIDE-LOCKING-RANGE; POWER;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This letter presents a lower power and wide locking range divide-by-2 with capacitive cross-coupled injection-locked frequency divider (ILFD) implemented in the TSMC standard 0.18 mu m CMOS process. The ILFD is based on a capacitive cross-coupled VCO with one injection MOSFET for coupling the external signal to the resonator. The ILFD uses one 3-dimensional inductors to reduce the die area. At the supply voltage of 1V, the divider's free-running frequency is 2.27 GHz, and at the incident power of 0 dBm the locking range is about 5.9GHz (132.58 %) from 1.5GHz to 7.4 GHz. The core power consumption is 10.22mW. At low power mode, the ILFD has higher figure of merit. The die area is 0.719x0.637 mm(2).
引用
收藏
页码:5 / 8
页数:4
相关论文
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