The effect of dislocation nature on the size effect in Indium Antimonide above and below the brittle-ductile transition

被引：3

作者：

Wheeler, J. M. ^{[1
,2
]}

Thilly, L. ^{[3
]}

Zou, Y. ^{[1
]}

Morel, A. ^{[2
]}

Raghavan, R. ^{[2
,4
]}

Michler, J. ^{[2
]}

机构：

[1] Swiss Fed Inst Technol, Lab Nanomet, Dept Mat Sci, Vladimir Prelog Weg 5, CH-8093 Zurich, Switzerland

[2] Empa, Swiss Fed Labs Mat Sci & Technol, Lab Mech Mat & Nanostruct, Feuerwerkerstr 39, CH-3602 Thun, Switzerland

[3] Univ Poitiers, Inst Pprime, CNRS, ENSMA,SP2MI, F-86962 Futuroscope, France

[4] Indian Inst Sci, Dept Mat Engn, Bangalore 560012, Karnataka, India

来源：

MRS ADVANCES | 2020年 / 5卷 / 33-34期

关键词：

dislocations; strength; electronic material; microscale; 400; DEGREES-C; SINGLE-CRYSTALS; YIELD STRENGTH; STRAIN BURSTS; COMPRESSION; TEMPERATURE; PLASTICITY; MICROPILLARS; DEFORMATION; INDENTATION;

D O I：

10.1557/adv.2019.369

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of length scale on mechanical strength is a significant consideration for semiconductor materials. In III-V semiconductors, such as InSb, a transition from partial to perfect dislocations occurs at the brittle-to-ductile transition temperature (similar to 150 degrees C for InSb). High temperature micro-compression reveals InSb to show a small size effect below the transition, similar to ceramics, while in the ductile regime it shows a size effect consistent with fcc metals. The source truncation model is found to agree with the observed trends in strength with size once the change in Burgers vector and bulk strength are taken into account.

引用

页码：1811 / 1818

页数：8

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