Strain analysis of compositionally tailored interfaces in InAs/GaSb superlattices

被引：18

作者：

Mahalingam, Krishnamurthy ^{[1
]}

Haugan, Heather J. ^{[1
]}

Brown, Gail J. ^{[1
]}

Aronow, Andrew J. ^{[1
]}

机构：

[1] Air Force Res Lab, AFRL RXAN, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 21期

关键词：

ELECTRON-MICROSCOPY; LASERS; HRTEM;

D O I：

10.1063/1.4833536

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of interface composition control on interfacial strain distribution in InAs/GaSb superlattices on (100)-GaSb substrates is investigated by atomic resolution scanning transmission electron microscopy. The interface composition was controlled by either depositing InSb at each interface or soaking the GaSb-on-InAs interface under Sb-2 atmosphere. The strain profiles reveal a distinct difference in the extent to which the superlattice strain is balanced using the two methods. In particular, they indicate that the degree of strain balance achievable with soaking is inherently limited by the arsenic surface coverage during GaSb-on-InAs interface formation, emphasizing the influence of V/III flux ratio at this interface. The results also explain observed X-ray diffraction profiles. (C) 2013 AIP Publishing LLC.

引用

页数：4

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