Effect of a Boron Additive on the Microstructure and Dielectric Properties of BaTiO3 Thin Films Formed by Nanocrystal Deposition

被引：0
作者：
Takezawa, Yoko [1 ]
Ryu, Minoru [1 ]
Iwazaki, Yoshiki [1 ]
Suzuki, Toshimasa [1 ]
Mizuno, Youichi [1 ]
Imai, Hiroaki
机构：
[1] Taiyo Yuden Co Ltd, Gunma 3703347, Japan
来源：
ELECTROCERAMICS IN JAPAN XV | 2013年 / 566卷
关键词：
BaTiO3; nanocrystal; thin film; capacitor; boron; manganese; CHEMICAL SOLUTION DEPOSITION; ELECTRICAL-PROPERTIES;
D O I：
10.4028/www.scientific.net/KEM.566.277
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Highly crystallized BaTiO3 thin films were fabricated by a nanocrystal sintering process. Boron alkoxide was introduced into a slurry of Mn-doped BaTiO3 nanocrystals with particle sizes of 5-7 nm. The deposited nanocrystal film on a (111)-oriented Pt/TiO2/Al2O3 substrate was sintered at a low temperature of 800 degrees C and the obtained film had highly densified and oriented microstructures. We found that the boron additive enhanced the grain growth of nanoparticles and as a result the dielectric constant of the thin film increased to 1100 at 10 kHz, which is much higher than that of undoped BaTiO3 thin films.
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页码：277 / 280
页数：4
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