Tuning of magnetic and transport properties in Bi2Te3 by divalent Fe doping

被引：29

作者：

Jo, N. H. ^{[1
]}

Lee, K. J. ^{[1
]}

Kim, C. M. ^{[1
]}

Okamoto, K. ^{[2
]}

Kimura, A. ^{[2
]}

Miyamoto, K. ^{[3
]}

Okuda, T. ^{[3
]}

Kim, Y. K. ^{[4
]}

Lee, Z. ^{[4
]}

Onimaru, T. ^{[5
]}

Takabatake, T. ^{[5
]}

Jung, M. H. ^{[1
]}

机构：

[1] Sogang Univ, Dept Phys, Seoul 121742, South Korea

[2] Hiroshima Univ, Grad Sch Sci, Higashihiroshima 7398526, Japan

[3] Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr, Higashihiroshima 7390046, Japan

[4] UNIST, Sch Mech & Adv Mat Engn, Ulsan 689798, South Korea

[5] Hiroshima Univ, ADSM, Dept Quantum Matter, Higashihiroshima 7398530, Japan

来源：

PHYSICAL REVIEW B | 2013年 / 87卷 / 20期

关键词：

SINGLE DIRAC CONE; TOPOLOGICAL-INSULATOR; SURFACE; SPIN; DEFECTS; SB2TE3; PHASE;

D O I：

10.1103/PhysRevB.87.201105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the doping effect of a magnetic Fe ion in Bi2Te3, that is, Bi2-xFexTe3 (x = 0, 0.08, 0.15, 0.2, 0.25, and 0.3). The paramagnetic magnetization data reveal that the Fe ions are doped in the divalent form. The Fe2+ state substituted for Bi3+ can create hole donors, which compensate for the electron dopants of Bi2Te3 with a small amount of Te excess. This causes the n-type carrier density to be decreased with increasing x, and finally be changed to p type at x = 0.3, where the carrier mobility suddenly drops and the electrical resistivity abruptly increases. These results are consistent with angle-resolved photoemission spectroscopy experiments. The Fermi level shifts downward with increasing x. Furthermore, we find a larger spin polarization for the Fe-doped Bi2Te3 samples, which is crucial for future spintronics applications.

引用

页数：5

共 29 条

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