Black phosphorus plasmonics: anisotropic elliptical propagation and nonlocality-induced canalization

被引:109
作者
Correas-Serrano, D. [1 ,2 ,3 ]
Gomez-Diaz, J. S. [1 ,3 ]
Alvarez Melcon, A. [2 ]
Alu, Andrea [1 ]
机构
[1] Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78712 USA
[2] Univ Politecn Cartagena, E-30202 Murcia, Spain
[3] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA
基金
美国国家科学基金会;
关键词
plasmonics; uniaxial; hyperbolic materials; black phosphorus; nonlocality; PHOTOLUMINESCENCE;
D O I
10.1088/2040-8978/18/10/104006
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We investigate unusual surface plasmons polariton (SPP) propagation and light-matter interactions in ultrathin black phosphorus (BP) films, a 2D material that exhibits exotic electrical and physical properties due to its extremely anisotropic crystal structure. Recently, it has been speculated that the ultra-confined surface plasmons supported by BP may present various topologies of wave propagation bands, ranging from anisotropic elliptic to hyperbolic, across the mid-and near-infrared regions of the electromagnetic spectrum. By carefully analyzing the natural nonlocal anisotropic optical conductivity of BP, derived using the Kubo formalism and an effective low-energy Hamiltonian, we demonstrate here that the SPP wavenumber cutoff imposed by nonlocality prohibits that they acquire an arbitrary hyperbolic topology, forcing operation in the canalization regime. The resulting nonlocality-induced canalization presents interesting properties, as it is inherently broadband, enables large light-matter interactions in the very near field, and allows extreme device miniaturization. We also determine fundamental bounds to the confinement of BP plasmons, which are significantly weaker than for graphene, thus allowing a larger local density of states. Our results confirm the potential of BP as a promising reconfigurable plasmonic platform, with exciting applications, such as planar hyperlenses, optoelectronic components, imaging, and communication systems.
引用
收藏
页数:10
相关论文
共 33 条
[11]   Hyperbolic Plasmons and Topological Transitions Over Uniaxial Metasurfaces [J].
Gomez-Diaz, J. Sebastian ;
Tymchenko, Mykhailo ;
Alu, Andrea .
PHYSICAL REVIEW LETTERS, 2015, 114 (23)
[12]   Visible-frequency hyperbolic metasurface [J].
High, Alexander A. ;
Devlin, Robert C. ;
Dibos, Alan ;
Polking, Mark ;
Wild, Dominik S. ;
Perczel, Janos ;
de Leon, Nathalie P. ;
Lukin, Mikhail D. ;
Park, Hongkun .
NATURE, 2015, 522 (7555) :192-196
[13]   Plasmonics in graphene at infrared frequencies [J].
Jablan, Marinko ;
Buljan, Hrvoje ;
Soljacic, Marin .
PHYSICAL REVIEW B, 2009, 80 (24)
[14]   Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus [J].
Kim, Jimin ;
Baik, Seung Su ;
Ryu, Sae Hee ;
Sohn, Yeongsup ;
Park, Soohyung ;
Park, Byeong-Gyu ;
Denlinger, Jonathan ;
Yi, Yeonjin ;
Choi, Hyoung Joon ;
Kim, Keun Su .
SCIENCE, 2015, 349 (6249) :723-726
[15]   Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility [J].
Liu, Han ;
Neal, Adam T. ;
Zhu, Zhen ;
Luo, Zhe ;
Xu, Xianfan ;
Tomanek, David ;
Ye, Peide D. .
ACS NANO, 2014, 8 (04) :4033-4041
[16]   Semiclassical spatially dispersive intraband conductivity tensor and quantum capacitance of graphene [J].
Lovat, Giampiero ;
Hanson, George W. ;
Araneo, Rodolfo ;
Burghignoli, Paolo .
PHYSICAL REVIEW B, 2013, 87 (11)
[17]   Plasmons and Screening in Monolayer and Multilayer Black Phosphorus [J].
Low, Tony ;
Roldan, Rafael ;
Wang, Han ;
Xia, Fengnian ;
Avouris, Phaedon ;
Martin Moreno, Luis ;
Guinea, Francisco .
PHYSICAL REVIEW LETTERS, 2014, 113 (10)
[18]   Tunable optical properties of multilayer black phosphorus thin films [J].
Low, Tony ;
Rodin, A. S. ;
Carvalho, A. ;
Jiang, Yongjin ;
Wang, Han ;
Xia, Fengnian ;
Neto, A. H. Castro .
PHYSICAL REVIEW B, 2014, 90 (07)
[19]   Bandgap Engineering of Phosphorene by Laser Oxidation toward Functional 2D Materials [J].
Lu, Junpeng ;
Wu, Jing ;
Carvalho, Alexandra ;
Ziletti, Angelo ;
Liu, Hongwei ;
Tan, Junyou ;
Chen, Yifan ;
Castro Neto, A. H. ;
Oezyilmaz, Barbaros ;
Sow, Chorng Haur .
ACS NANO, 2015, 9 (10) :10411-10421
[20]   Atomically Thin MoS2: A New Direct-Gap Semiconductor [J].
Mak, Kin Fai ;
Lee, Changgu ;
Hone, James ;
Shan, Jie ;
Heinz, Tony F. .
PHYSICAL REVIEW LETTERS, 2010, 105 (13)