Self-consistent theory of pressure on doped Kondo insulators

The effects of pressure on doped Kondo insulators are studied in the framework of slave-boson mean-field theory under the coherent potential approximation. A unified picture is presented for both the h-type Kondo insulators (SmB6 and YbB12) and the e-type Kondo insulators (Ce3Bi4Pt3). The f-electron's density of states within the whole range of the concentration of nonmagnetic atoms are calculated self-consistently under various pressures. The variation of the energy gap and the Kondo temperature with pressure are also obtained. These theoretical results can be considered as a possible approach to study systematically the development of the gap behavior by doping and by mechanical pressure. (C) 2001 Elsevier Science B.V. All rights reserved.