Atomic-scale studies of the electronic structure of ceramic/metal interfaces: {222}MgO/Cu

被引:4
作者
Muller, DA [1 ]
Shashkov, DA
Benedek, R
Yang, LH
Silcox, J
Seidman, DN
机构
[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
[2] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA
[3] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[4] Univ Calif Lawrence Livermore Natl Lab, Condensed Matter Phys Div, Livermore, CA 94551 USA
来源
INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, IIB98 | 1999年 / 294-2卷
关键词
ceramic/metal heterophase interfaces; electron energy loss spectroscopy; local density functional theory; {111}MgO/Cu heterophase interfaces; electronic structure of interfaces;
D O I
10.4028/www.scientific.net/MSF.294-296.99
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
{222} MgO/Cu interfaces produced by internal oxidation are studied by electron energy loss spectroscopy (EELS) using an atomic sized electron beam. We determine interfacial chemistry of this interface with subnanometer spatial resolution and use EELS to measure directly the electronic states pertaining to the buried interface. The O-K edge gives evidence of metal-induced gap states (MIGS) within the bandgap of MgO, at the interface, which we find to be O terminated. Both experiment and ab initio calculations show the MIGS to be strongly localized at the interface.
引用
收藏
页码:99 / 102
页数:4
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