Marked enhancement in the efficiency of deep ultraviolet light-emitting diodes by using a AlxGa1-xN carrier reservoir layer

被引：25
作者：
He, Longfei [1 ,2 ]
Zhao, Wei [2 ]
Zhang, Kang [2 ]
He, Chenguang [2 ]
Wu, Hualong [2 ]
Liu, Xiaoyan [2 ]
Luo, Xingjun [1 ]
Li, Shuti [1 ]
Chen, Zhitao [2 ]
机构：
[1] South China Normal Univ, Inst Optoelect Mat & Technol, Guangdong Engn Res Ctr Optoelect Funct Mat & Devi, Guangzhou 510631, Guangdong, Peoples R China
[2] Guangdong Acad Sci, Guangdong Inst Semicond Ind Technol, Guangzhou 510650, Guangdong, Peoples R China
来源：
APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 06期
基金：
国家重点研发计划; 中国国家自然科学基金;
关键词：
PERFORMANCE IMPROVEMENT; POLARIZATION; INJECTION;
D O I：
10.7567/1882-0786/ab22df
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The advantages of using an AlxGa1-xN carrier reservoir layer (CRL) instead of the traditional last quantum barrier for deep-ultraviolet light-emitting diodes (DUV LEDs) were investigated. The results indicate that the internal quantum efficiency is markedly enhanced and the efficiency droop phenomenon is alleviated. These improvements are mainly attributed to the significantly enhanced hole-injection and radiative recombination rate. Additionally, when the Al contents of the CRL gradually decrease to that of the quantum wells, a large number of electrons and holes are reserved in the CRL region and recombined to emit DUV light, leading to marked enhancement of the optical performance. (C) 2019 The Japan Society of Applied Physics
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页数：4
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