Antibonding Ground States in InAs Quantum-Dot Molecules

被引：100

作者：

Doty, M. F. ^{[1
]}

Climente, J. I. ^{[2
]}

Korkusinski, M. ^{[3
]}

Scheibner, M. ^{[1
]}

Bracker, A. S. ^{[1
]}

Hawrylak, P. ^{[3
]}

Gammon, D. ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] CNR, INFM, Natl Ctr NanoStruct & BioSyst Surfaces, I-41100 Modena, Italy

[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 04期

关键词：

EXCITONS;

D O I：

10.1103/PhysRevLett.102.047401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Coherent tunneling between two InAs quantum dots forms delocalized molecular states. Using magnetophotoluminescence spectroscopy we show that when holes tunnel through a thin barrier, the lowest energy molecular state has bonding orbital character. However, as the thickness of the barrier increases, the molecular ground state changes character from a bonding orbital to an antibonding orbital, confirming recent theoretical predictions. We explain how the spin-orbit interaction causes this counterintuitive reversal by using a four-band k center dot p model and atomistic calculations that account for strain.

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页数：4

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