Formation of iron-oxide nanorods on the surface of silicon by using annealing technique

被引:0
作者
Rawat, Nitin [1 ,2 ]
Kumari, Sarita [3 ]
Kumar, Rajesh [4 ]
机构
[1] Banasthali Univ, Dept Phys, Tonk 304022, India
[2] Gwangju Inst Sci & Technol, Dept Informat & Commun, Gwangju 61005, South Korea
[3] Banasthali Univ, Dept Phys, Tonk 304022, India
[4] Jaypee Univ Informat Technol, Solan 173234, India
关键词
Nanorods; FeO; Annealing; Si substrates; ELECTRONIC-PROPERTIES; NANOWIRES; SI(001); SILICIDES; ARRAYS;
D O I
10.3938/jkps.69.1771
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this article, we report the synthesis of iron-oxide nanorods on silicon (Si) substrates. The nanorods were formed by annealing an iron chloride solution on the surface of a Si at 950 A degrees C in the presence of a reducing gas (H-2) and a diluting gas (Ar). The surface morphologies of the nanorods were investigated by using field-emission scanning electron microscopy, and their compositions and structural characterization were investigated by elemental using energy dispersive X-ray spectroscopy and high-resolution transmission electron microscopy (HRTEM), respectively. The HRTEM study shows a crystalline formation of the nanorods. The electron diffraction pattern along the viewing (111) direction and the HRTEM result shows an interplanar distance equal to 2.17 , which is nearly equal to the standard value 2.3 of FeO. The as-fabricated nanorods can be used for many technological applications.
引用
收藏
页码:1771 / 1775
页数:5
相关论文
共 30 条
[1]   Quantum optics with surface plasmons [J].
Chang, D. E. ;
Sorensen, A. S. ;
Hemmer, P. R. ;
Lukin, M. D. .
PHYSICAL REVIEW LETTERS, 2006, 97 (05)
[2]   Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001) [J].
Chen, Y ;
Ohlberg, DAA ;
Medeiros-Ribeiro, G ;
Chang, YA ;
Williams, RS .
APPLIED PHYSICS LETTERS, 2000, 76 (26) :4004-4006
[3]   Nanowires of four epitaxial hexagonal silicides grown on Si(001) [J].
Chen, Y ;
Ohlberg, DAA ;
Williams, RS .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (05) :3213-3218
[4]   Metallic rare-earth silicide nanowires on silicon surfaces [J].
Daehne, Mario ;
Wanke, Martina .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2013, 25 (01)
[5]   Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices [J].
Duan, XF ;
Huang, Y ;
Cui, Y ;
Wang, JF ;
Lieber, CM .
NATURE, 2001, 409 (6816) :66-69
[6]  
Galicia R, 2013, REV MEX FIS, V59, P102
[7]   Self-organization of mesoscopically ordered parallel Gd-silicide nanowire arrays on a Si(110)-16x2 surface: A massively parallel active architecture [J].
Hong, Ie-Hong ;
Tsai, Yung-Feng ;
Chen, Tsung-Ming .
APPLIED PHYSICS LETTERS, 2011, 98 (19)
[8]   Directed assembly of one-dimensional nanostructures into functional networks [J].
Huang, Y ;
Duan, XF ;
Wei, QQ ;
Lieber, CM .
SCIENCE, 2001, 291 (5504) :630-633
[9]   An STM study of the Si(001) (2 x 7) - Gd, Dy surface [J].
Liu, BZ ;
Nogami, J .
SURFACE SCIENCE, 2003, 540 (01) :136-144
[10]   Self-assembled rare-earth silicide nanowires on Si(001) [J].
Nogami, J ;
Liu, BZ ;
Katkov, MV ;
Ohbuchi, C ;
Birge, NO .
PHYSICAL REVIEW B, 2001, 63 (23)