Effect of Work Function Difference Between Top and Bottom Electrodes on the Resistive Switching Properties of SiN Films

被引：49

作者：

Hong, Seok Man ^{[1
]}

Kim, Hee-Dong ^{[1
]}

An, Ho-Myoung ^{[2
]}

Kim, Tae Geun ^{[1
]}

机构：

[1] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

[2] Osan Coll, Dept Digital Elect, Gyeonggi 447749, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

Activation energy of traps; resistive random access memories (RRAM); resistive switching; silicon nitride; work function difference;

D O I：

10.1109/LED.2013.2272631

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, the effect of the work function difference between various top electrodes (TE-Ni, W, Ti, and Al) and the Pt bottom electrode, Delta Phi(M), on the resistive switching (RS) of SiN thin films was investigated. The cells with W and Ti TEs showed stable RS, but others failed to show RS. In particular, the Ti TE exhibited low operating currents (similar to 2 mu A) and good retention properties (< similar to 10(4) s at 85 degrees C). On the basis of the analysis of conduction mechanisms, it is found that stable RS of SiN films might be strongly related to the activation energy of traps induced by Delta Phi(M). Thus, the RS properties of the SiN films can be improved by engineering Delta Phi(M) without additional processes.

引用

页码：1181 / 1183

页数：3

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