Gating schemes for controlling the electron wavefunction between GaAs and In0.05Ga0.95As quasi-one-dimensional channels

The selective composition control of the electron wavefunction in a GaAs/InGaAs double quantum well device is presented for two different gating schemes. In particular, electron-beam defined surface gates schemes allow the definition of non-ballistic quasi -one-dimensional conduction channels in each of the quantum wells and result in the ability to electrostatically move the electron wavefunction between the two materials. The use of such a device as the basis for a spin qubit, due to the differing g-factors. and the investigation of other spin-related phenomena in one-dimension are discussed.