Atomic layer deposition on suspended single-walled carbon nanotubes via gas-phase noncovalent functionalization

被引:189
作者
Farmer, DB
Gordon, RG [1 ]
机构
[1] Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA
[2] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA
关键词
D O I
10.1021/nl052453d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Alternating exposures of nitrogen dioxide gas and trimethylaluminum vapor are shown to functionalize the surfaces of single-walled carbon nanotubes with a self-limited monolayer. Functionalized nanotube surfaces are susceptible to atomic layer deposition of continuous, radially isotropic material. This allows for the creation of coaxial nanotube structures of multiple materials with precisely controlled diameters. Functionalization involves only weak physical bonding, avoiding covalent modification, which should preserve the unique optical, electrical, and mechanical properties of the nanotubes.
引用
收藏
页码:699 / 703
页数:5
相关论文
共 22 条
  • [1] A simple chemical route to selectively eliminate metallic carbon nanotubes in nanotube network devices
    An, L
    Fu, QA
    Lu, CG
    Liu, J
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2004, 126 (34) : 10520 - 10521
  • [2] ARMER DB, 2005, ELECTROCHEM SOLID ST, V8, pG89
  • [3] Highly functionalized carbon nanotubes using in situ generated diazonium compounds
    Bahr, JL
    Tour, JM
    [J]. CHEMISTRY OF MATERIALS, 2001, 13 (11) : 3823 - +
  • [4] Integration of suspended carbon nanotube arrays into electronic devices and electromechanical systems
    Franklin, NR
    Wang, Q
    Tombler, TW
    Javey, A
    Shim, M
    Dai, HJ
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (05) : 913 - 915
  • [5] Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O
    Gosset, LG
    Damlencourt, JF
    Renault, O
    Rouchon, D
    Holliger, P
    Ermolieff, A
    Trimaille, I
    Ganem, JJ
    Martin, F
    Séméria, MN
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 303 (01) : 17 - 23
  • [6] Metal-insulator-semiconductor electrostatics of carbon nanotubes
    Guo, J
    Goasguen, S
    Lundstrom, M
    Datta, S
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (08) : 1486 - 1488
  • [7] GUO J, 2002, APPL PHYS LETT, P23194
  • [8] Atomic layer deposition of hafnium and zirconium oxides using metal amide precursors
    Hausmann, DM
    Kim, E
    Becker, J
    Gordon, RG
    [J]. CHEMISTRY OF MATERIALS, 2002, 14 (10) : 4350 - 4358
  • [9] Carbon nanotubes as Schottky barrier transistors
    Heinze, S
    Tersoff, J
    Martel, R
    Derycke, V
    Appenzeller, J
    Avouris, P
    [J]. PHYSICAL REVIEW LETTERS, 2002, 89 (10)
  • [10] Carbon nanotube applications in microelectronics
    Hoenlein, W
    Kreupl, F
    Duesberg, GS
    Graham, AP
    Liebau, M
    Seidel, RV
    Unger, E
    [J]. IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, 2004, 27 (04): : 629 - 634