Point defect determination by photoluminescence and capacitance-voltage characterization in a GaN terahertz Gunn diode

被引：2

作者：

Li Liang ^{[1
]}

Yang Lin-An ^{[1
]}

Zhou Xiao-Wei ^{[1
]}

Zhang Jin-Cheng ^{[1
]}

Hao Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Bandgap Semicond Mat & Devices, Minist Educ, Xian 710071, Peoples R China

来源：

CHINESE PHYSICS B | 2013年 / 22卷 / 08期

基金：

中国国家自然科学基金;

关键词：

GaN terahertz Gunn diode; point defect; photoluminescence; capacitance-voltage; FILMS;

D O I：

10.1088/1674-1056/22/8/087104

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Photoluminescence (PL) measurement is used to study the point defect distribution in a GaN terahertz Gunn diode, which is able to the degrade high-field transport characteristic during further device operation. PL, secondary ion mass spectroscopy (SIMS), transmission electron microscope (TEM), and capacitance-voltage (C-V) measurements are used to discuss the origin of point defects responsible for the yellow luminescence in structures. The point defect densities of about 10(11) cm(-2) in structures are extracted by analysis of C-V characterization. After thermal annealing treatment, diminishments of point defect densities in structures are efficiently demonstrated by PL and C-V results.

引用

页数：5

共 20 条

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