Influence of the p-type doping on the radiometric performances of MWIR InAs/GaSb superlattice photodiodes

被引：7

作者：

Giard, E. ^{[1
]}

Ribet-Mohamed, I. ^{[1
]}

Delmas, M. ^{[2
,3
]}

Rodriguez, J. B. ^{[2
,3
]}

Christol, P. ^{[2
,3
]}

机构：

[1] Off Natl Etud & Rech Aerosp, F-91761 Palaiseau, France

[2] Univ Montpellier, IES, UMR 5214, F-34000 Montpellier, France

[3] CNRS, IES, UMR 5214, F-34000 Montpellier, France

来源：

INFRARED PHYSICS & TECHNOLOGY | 2015年 / 70卷

关键词：

InAs/GaSb superlattice; Photodiode; Quantum efficiency;

D O I：

10.1016/j.infrared.2014.07.034

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this paper, quantum efficiency (QE) measurements performed on type-II InAs/GaSb superlattice (T2SL) photodiodes operating in the mid-wavelength infrared domain, are reported. Several comparisons were made in order to determine the SL structure showing optimum radiometric performances: same InAsrich SL structure with different active zone thicknesses (from 0.5 mu m to 4 mu m) and different active zone doping (n-type versus p-type), same 1 mu m thick p-type active zone doping with different SL designs (InAs-rich versus GaSb-rich and symmetric SL structures). Best result was obtained for the p-type doped InAs-rich SL photodiode, with a 4 mu m active zone thickness, showing a QE that reaches 61% at lambda = 2 mu m and 0 V bias voltage. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：103 / 106

页数：4

共 18 条

[1] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].

ESAKI, L ;

TSU, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) :61-&

[2] Radiometric and noise characteristics of InAs-rich T2SL MWIR pin photodiodes [J].

Giard, E. ;

Taalat, R. ;

Delmas, M. ;

Rodriguez, J. -B. ;

Christol, P. ;

Ribet-Mohamed, I. .

JOURNAL OF THE EUROPEAN OPTICAL SOCIETY-RAPID PUBLICATIONS, 2014, 9

[3] Demonstration of 1Kx1K Long-wave and Mid-wave Superlattice Infrared Focal Plane Arrays [J].

Gunapala, S. D. ;

Ting, D. Z. ;

Hill, C. J. ;

Nguyen, J. ;

Soibel, A. ;

Rafol, S. B. ;

Keo, S. A. ;

Mumolo, J. M. ;

Lee, M. C. ;

Liu, J. K. ;

Yang, B. ;

Liao, A. .

INFRARED REMOTE SENSING AND INSTRUMENTATION XVIII, 2010, 7808

[4]

Hoffman D., 2007, APPL PHYS LETT, V91

[5]

HOVEL J, 1975, SEMICONDUCTORS SEMIM

[6]

Huang E.K., 2012, OPT LETT, V37

[7] Thin active region, type II superlattice photodiode arrays: Single-pixel and focal plane array characterization [J].

Little, J. W. ;

Svensson, S. P. ;

Beck, W. A. ;

Goldberg, A. C. ;

Kennerly, S. W. ;

Hongsmatip, T. ;

Winn, M. ;

Uppal, P. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (04)

[8] Dark current suppression in type IIInAs/GaSb superlattice long wavelength infrared photodiodes with M-structure barrier [J].

Nguyen, Binh-Minh ;

Hoffman, Darin ;

Delaunay, Pierre-Yves ;

Razeghi, Manijeh .

APPLIED PHYSICS LETTERS, 2007, 91 (16)

[9] Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice [J].

Olson, B. V. ;

Shaner, E. A. ;

Kim, J. K. ;

Klem, J. F. ;

Hawkins, S. D. ;

Murray, L. M. ;

Prineas, J. P. ;

Flatte, M. E. ;

Boggess, T. F. .

APPLIED PHYSICS LETTERS, 2012, 101 (09)

[10]

Plis E., 2011, LASER PHOTONICS REV, V7, P1

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