Measurement of electric-field induced second harmonic generation in hydrogenated amorphous silicon

被引：8

作者：

He, Long ^{[1
]}

Walker, James D. ^{[1
]}

Branz, Howard M. ^{[2
]}

Rogers, Charles T. ^{[1
]}

Teplin, Charles W. ^{[2
]}

机构：

[1] Univ Colorado, Dept Phys, Boulder, CO 80309 USA

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 16期

关键词：

SPECTROSCOPY;

D O I：

10.1063/1.4761477

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We quantitatively separate interface optical second harmonic generation (SHG) and electric-field induced second harmonic generation (EFISH) from hydrogenated amorphous silicon (a-Si:H) interfaces and bulk. Using a 1.51 eV probe laser, we measure SHG signals from indium tin oxide (ITO) ITO/a-Si:H/ITO sandwich structures and vary the electric fields in the a-Si:H layer using an applied voltage bias. The a-Si:H/ITO interfaces form back-to-back diodes. Because of finite optical penetration depth, SHG probes only the front diode. When the front diode is reverse biased, the EFISH contribution dominates the SHG signal and probes the electric field in the similar to 30 nm adjacent to the interface. Through fitting of the SHG data, we find that in this near-interface region, the electric field is proportional to the square root of the applied bias. The fitting measures the interfacial ITO/a-Si:H built-in voltage to be similar to 0.2 V. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4761477]

引用

页数：5

共 33 条

[1] dc-electric-field-induced second-harmonic generation in Si(111)-SiO2-Cr metal-oxide-semiconductor structures [J].