Free-standing zinc-blende (cubic) GaN layers and substrates

被引：28

作者：

Novikov, S. V. ^{[1
]}

Stanton, N. M. ^{[1
]}

Campion, R. P. ^{[1
]}

Foxon, C. T. ^{[1
]}

Kent, A. J. ^{[1
]}

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 17期

基金：

英国工程与自然科学研究理事会;

关键词：

substrates; molecular beam epitaxy; nitrides; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2008.06.018

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

It has been demonstrated that it is possible to grow by molecular beam epitaxy bulk free-standing zinc-blende (cubic) GaN layers. Such layers have potential applications as lattice matched substrates for growth of non-polar cubic GaN device structures of improved performance. We present the data from characterisation measurements that confirm the cubic nature of the GaN crystals and show that the fraction of the hexagonal material is not more than about 10% in the best 50 mu m thick free-standing GaN samples. Our research is aimed at increasing the size of the free-standing cubic GaN layers in order to make this technology suitable for the commercial production of substrates and we have now demonstrated the growth of 100 mu m thick, 2-in diameter GaN substrates. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：3964 / 3967

页数：4

共 16 条

[1] Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures [J].

Ambacher, O ;

Majewski, J ;

Miskys, C ;

Link, A ;

Hermann, M ;

Eickhoff, M ;

Stutzmann, M ;

Bernardini, F ;

Fiorentini, V ;

Tilak, V ;

Schaff, B ;

Eastman, LF .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (13) :3399-3434

[2] p- and n-type cubic GaN epilayers on GaAs [J].

As, DJ ;

Schikora, D ;

Greiner, A ;

Lubbers, M ;

Mimkes, J ;

Lischka, K .

PHYSICAL REVIEW B, 1996, 54 (16) :11118-11121

[3] Comment on "AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy" [Appl. Phys. Lett. 81, 1729 (2002)] [J].

Belyaev, AE ;

Foxon, CT ;

Novikov, SV ;

Makarovsky, O ;

Eaves, L ;

Kappers, MJ ;

Humphreys, CJ .

APPLIED PHYSICS LETTERS, 2003, 83 (17) :3626-3627

[4] SELECTIVE GROWTH OF ZINCBLENDE, WURTZITE, OR A MIXED-PHASE OF GALLIUM NITRIDE BY MOLECULAR-BEAM EPITAXY [J].

CHENG, TS ;

JENKINS, LC ;

HOOPER, SE ;

FOXON, CT ;

ORTON, JW ;

LACKLISON, DE .

APPLIED PHYSICS LETTERS, 1995, 66 (12) :1509-1511

[5] Free-standing zinc-blende (cubic) GaN substrates grown by a molecular beans epitaxy process [J].

Foxon, C. T. ;

Novikov, S. V. ;

Stanton, N. M. ;

Campion, R. P. ;

Kent, A. J. .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2008, 245 (05) :890-892

[6] The application of high pressure in physics and technology of III-V nitrides [J].

Grzegory, I ;

Krukowski, S ;

Leszczynski, M ;

Perlin, P ;

Suski, T ;

Porowski, S .

ACTA PHYSICA POLONICA A, 2001, 100 :57-109

[7] Structural and morphological characteristics of planar (11(2)over-bar0) a-plane gallium nitride grown by hydride vapor phase epitaxy [J].

Haskell, BA ;

Wu, F ;

Matsuda, S ;

Craven, MD ;

Fini, PT ;

DenBaars, SP ;

Speck, JS ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 2003, 83 (08) :1554-1556

[8] Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells [J].

Im, JS ;

Kollmer, H ;

Off, J ;

Sohmer, A ;

Scholz, F ;

Hangleiter, A .

PHYSICAL REVIEW B, 1998, 57 (16) :R9435-R9438

[9]

NOVIKOV S, 2007, COMPD SEMICOND, V13, P17

[10] Growth and characterization of free-standing zinc-blende (cubic) GaN layers and substrates [J].

Novikov, S. V. ;

Stanton, N. M. ;

Campion, R. P. ;

Morris, R. D. ;

Geen, H. L. ;

Foxon, C. T. ;

Kent, A. J. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (01)

← 1 2 →