Spin injection in metals: The bipolar spin transistor

被引：29

作者：

Johnson, M

机构：

[1] Naval Research Lab, Washington, DC

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1996年 / 156卷 / 1-3期

关键词：

D O I：

10.1016/0304-8853(95)00883-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transport equations for spin transistor action, appropriate for realistic models of materials and interfaces, are developed from a detailed microscopic model. Experimental results from prototypes are summarized in the context of device applications. Using spin injection to study spin accumulation in superconducting films is discussed.

引用

页码：321 / 324

页数：4

共 15 条

[11] THERMODYNAMIC ANALYSIS OF INTERFACIAL TRANSPORT AND OF THE THERMOMAGNETOELECTRIC SYSTEM
JOHNSON, M
SILSBEE, RH
[J]. PHYSICAL REVIEW B, 1987, 35 (10): : 4959 - 4972
[12] THE BIPOLAR SPIN TRANSISTOR
JOHNSON, M
[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1995, 140 : 21 - 24
[13] CORRELATION BETWEEN SPIN POLARIZATION OF TUNNEL CURRENTS FROM 3D FERROMAGNETS AND THEIR MAGNETIC-MOMENTS
MESERVEY, R
PARASKEVOPOULOS, D
TEDROW, PM
[J]. PHYSICAL REVIEW LETTERS, 1976, 37 (13) : 858 - 860
[14] SPIN-DEPENDENT TUNNELING INTO FERROMAGNETIC NICKEL
TEDROW, PM
MESERVEY, R
[J]. PHYSICAL REVIEW LETTERS, 1971, 26 (04) : 192 - &
[15] TEDROW PM, 1973, PHYS REV B, V7

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