Segregation of gallium at SiO2/Si interfaces during sputtering with Ga+ ions:: experimental and computer simulation study

被引：6

作者：

Ignatova, V

Chakarov, I

Torrisi, A

Licciardello, A

机构：

[1] Catania Univ, Dipartimento Sci Chim, I-95100 Catania, Italy

[2] Bulgarian Acad Sci, Inst Elect, Sofia 1784, Bulgaria

[3] Silvaco Int, Santa Clara, CA 95054 USA

来源：

APPLIED SURFACE SCIENCE | 2002年 / 187卷 / 1-2期

关键词：

secondary ion (neutral) mass spectrometry; atom-solid interaction; sputtering; surface segregation; Monte Carlo simulations;

D O I：

10.1016/S0169-4332(01)00812-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The sputtering of SiO2/Si interfaces with gallium ions was studied both experimentally by using secondary neutral mass spectrometry (SNMS) and by computer simulations by means of a dynamic Monte Carlo code. Oscillations of the gallium signal (from implanted primary ions) at the interface between the SiO2 and Si layers were observed. By means of computer simulations, it was shown that cascade effects alone cannot explain the experimental depth profiles. A model that includes additional defect transport phenomena such as bombardment-induced segregation is proposed and incorporated in an existing dynamic Monte Carlo computer code. The simulations with the new code give rise to profiles that are comparable with the experimental ones, confirming the correctness of the chosen approach. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：145 / 153

页数：9

共 19 条

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