Fabrication technology for high-density Josephson integrated circuits using mechanical polishing planarization

被引:11
作者
Numata, H [1 ]
Nagasawa, S [1 ]
Tanaka, M [1 ]
Tahara, S [1 ]
机构
[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan
关键词
D O I
10.1109/77.783709
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A mechanical polishing planarization (MPP) process is developed with an endpoint detection method. h-IPP makes it possible to form self-aligned contacts on small junctions and to decrease parasitic inductance. It can also control the thickness of the insulation layers precisely. MPP was used to fabricate a 22 mu m x 22 mu m vortex transitional memory cell and the cell operated correctly. The reliability of interlayer insulation was increased for 61-Kbit memory cell arrays fabricated using MPP. It is concluded that MPP is an effective technology for fabricating high-density Josephson circuits.
引用
收藏
页码:3198 / 3201
页数:4
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