Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model

被引：4
作者：
Alisultanov, Z. Z. [1 ,2 ,3 ]
机构：
[1] RAS, AM Prokhorov Gen Phys Inst, Moscow 119991, Russia
[2] RAS, Amirkhanov Inst Phys, Daghestan Sci Ctr, Makhachkala 367003, Russia
[3] Dagestan State Univ, Makhachkala 367000, Russia
来源：
LOW TEMPERATURE PHYSICS | 2013年 / 39卷 / 07期
关键词：
CHARGE-TRANSFER;
D O I：
10.1063/1.4816116
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper we have investigated thermoelectric effect in the epitaxial graphene on a semiconductor substrate using a simple model. We have obtained the expressions for static conductance and thermopower of the epitaxial graphene. The thermopower of the epitaxial graphene can be abnormally large near the edges of the semiconductor band gap. (C) 2013 AIP Publishing LLC.
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页码：592 / 594
页数：3
相关论文
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