Ultralow Threshold Lasing from a Continuous-Wave-Pumped SiNX/CsPbBr3/Ag Thin Film Mediated by the Whispering Gallery Modes of a SiO2 Microsphere

被引：6

作者：

Lin, Zhenxu ^{[1
]}

Huang, Rui ^{[3
]}

Li, Shulei ^{[2
]}

Liu, Shimei ^{[1
]}

Song, Jie ^{[3
]}

Panmai, Mingcheng ^{[1
]}

Lan, Sheng ^{[1
]}

机构：

[1] South China Normal Univ, Sch Informat & Optoelect Sci & Engn, Guangdong Prov Key Lab Nanophoton Funct Mat & Devi, Guangzhou 510006, Peoples R China

[2] Guangdong Polytech Normal Univ, Sch Optoelect Engn, Guangzhou 510665, Peoples R China

[3] Hanshan Normal Univ, Sch Mat Sci & Engn, Chaozhou 521041, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2022年 / 13卷 / 42期

基金：

中国国家自然科学基金;

关键词：

SEMICONDUCTOR-LASERS; PEROVSKITE; CSPBBR3; NANOCRYSTALS; BR;

D O I：

10.1021/acs.jpclett.2c02605

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin-film pervoskite lasers driven by a continuous wave (CW) laser with ultralow thresholds, which is crucial for the development of on-chip electrically driven lasers, have not yet been realized owing to the low excitation power density of the CW laser. Here, we reported the CW-laser-pumped lasing from a thin film of CsPbBr3 quantum dots (QDs) sandwiched by a SiNx and a Ag thin film and mediated by the whispering gallery modes of a SiO2 microsphere. The stable photoluminescence from CsPbBr3 QDs with a quantum efficiency of similar to 45% is realized by encapsulating with a thin SiNx film. Upon CW-laser pumping, lasing from the whispering gallery modes with a threshold of similar to 11.6 W/cm2 is successfully demonstrated at room temperature. The strong localization of electric field achieved in the particle-on-film system, which is revealed in the numerical simulations and lifetime measurements, plays a crucial role in the realization of the ultralow threshold lasing. Our findings open a new avenue for designing photostable CW-laser-pumped pervoskite lasers.

引用

页码：9967 / 9974

页数：8