Application of aluminum nitride films for electronic devices

被引：61

作者：

Belyanin, AF

Bouilov, LL

Zhirnov, VV

Kamenev, AI

Kovalskij, KA

Spitsyn, BV

机构：

[1] Russian Acad Sci, Inst Phys Chem, Moscow 117915, Russia

[2] Cent Sci & TEchnol Resources Inst Technomash, Moscow 121351, Russia

[3] Russian Acad Sci, Inst Crystallog, Moscow 117333, Russia

[4] Moscow MV Lomonosov State Univ, Dept Chem, Moscow 119899, Russia

来源：

关键词：

acoustoelectronics; aluminum nitride; emission; thermoprinting;

D O I：

10.1016/S0925-9635(98)00412-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

AlN films were grown by RF-magnetron reactive sputtering of Al-target in Ar+N-2 gaseous mixture. In the dependence on deposition conditions the films may be from nearly amorphous to fine crystalline structure. The [0001] texture for crystalline AlN is typical. The application of AlN films as a protective coating of thin-films thermoprinting devices; as a piezoelectric in devices based on surface acoustic waves and also as a material of cold cathodes is shown. (C) 1999 Published by Elsevier Science S.A. All rights reserved.

引用

页码：369 / 372

页数：4