A single-ended CMOS chopper amplifier for 1/f noise reduction of n-channel MOS transistors

被引：1

作者：

Mars, Kamel ^{[1
]}

Kawahito, Shoji ^{[2
]}

机构：

[1] Shizuoka Univ, Grad Sch Sci & Technol, Naka Ku, Hamamatsu, Shizuoka 4328011, Japan

[2] Shizuoka Univ, Elect Res Inst, Naka Ku, Hamamatsu, Shizuoka 4328011, Japan

来源：

IEICE ELECTRONICS EXPRESS | 2012年 / 9卷 / 02期

关键词：

chopping; low noise; 1/f noise reduction;

D O I：

10.1587/elex.9.98

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a single-ended CMOS chopper amplifier for 1/f noise reduction of n-channel MOS transistors and its application to a low-noise high-gain switched-capacitor (SC) amplifier for sensor interface circuits. Since the chopping is used inside of the operational transconductance amplifier (OTA), this amplifier can be used for high output impedance sensors. To investigate the effect of the proposed chopping technique, a test chip was fabricated using 0.25 mu m mixed-signal CMOS process. The total input-referred noise is greatly reduced by using a high chopping frequency of 256 kHz to 20 mu V-rms from 295 mu V-rms without chopping.

引用

页码：98 / 103

页数：6