Cubic boron nitride films for industrial applications

被引:42
|
作者
Bello, I
Chong, YM
Leung, KM
Chan, CY
Ma, KL
Zhang, WJ
Lee, ST
Layyous, A
机构
[1] City Univ Hong Kong, Ctr Super Diamond & Adv Films, Kowloon, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
[3] ISCAR Ltd, R&D Mat, Tefen, Israel
关键词
cubic boron nitride; epitaxy; physical vapor deposition; plasma enhanced CVD;
D O I
10.1016/j.diamond.2005.09.003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effects of kinetic energy, chemical nature of substrates and temperature on the synthesis of cBN films are explored to obtain cBN films with industrial quality. Carbon including amorphous carbon, nanocrystalline and polycrystalline diamond enables deposition of stable, thick and adherent cBN films with characteristic Raman signature. Although temperature has been designated as an unimportant parameter, the deposition at higher temperatures yields higher quality of cBN films. The higher temperature (800 degrees C was also employed at cBN deposition on diamond coated tungsten carbide (WC) cutting inserts using plasma enhanced chemical vapor deposition (PECVD). The quality of cBN films grown by PECVD significantly overcomes that prepared by physical vapor deposition (PVD) which is affected in large extent by the lower kinetic energies of particles used in PECVD. The low kinetic energy of particles induces surface growth mechanism which differs from the growth models previously proposed. (c) 2005 Elsevier B.V All rights reserved.
引用
收藏
页码:1784 / 1790
页数:7
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