Photoluminescence as an in situ probe for copper electrodeposition on p-GaAs

被引：3
作者：
Sutter, EMM [1 ]
Gérard, I [1 ]
Etcheberry, A [1 ]
机构：
[1] Univ Versailles St Quentin, CNRS, UMR C0173, IREM,Inst Lavoisier, F-78035 Versailles, France
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999年 / 146卷 / 04期
关键词：
D O I：
10.1149/1.1391784
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Photoluminescence (PL) was used as an in situ method for studying the electrodeposition of copper on p-GaAs. During electrodeposition, PL of GaAs decayed due to growth of the metallic layer and the PL signal was sensitive to a fraction of a monolayer of copper. Recovery of the initial PL intensity was observed after anodic stripping of the copper deposit. A quantitative empirical relationship was established between the PL decrease and the amount of deposited copper, Variation in PL intensity is mainly due to modification of the optical properties of the interface rather than to a change in semiconductor band bending. PL can be a convenient method for monitoring metal electrodeposition on other semiconductors too. (C) 1999 The Electrochemical Society. S0013-4651(98)06-037-6. All rights reserved.
引用
收藏
页码：1448 / 1454
页数：7
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