Two-dimensional van der Waals nanosheet devices for future electronics and photonics

被引:72
作者
Choi, Kyunghee [1 ]
Lee, Young Tack [2 ]
Im, Seongil [1 ]
机构
[1] Yonsei Univ, IPAP, Room 240, Seoul 03722, South Korea
[2] Korea Inst Sci & Technol, Postsilicon Semicond Inst, Ctr Optoelect Mat & Devices, Seoul 02792, South Korea
关键词
van der Waals 2D smiconductor; Transition metal dichalcogenide; Black phosphorous; Field effect transistor; PN diode; Photovoltaic heterojunction; FIELD-EFFECT TRANSISTORS; HEXAGONAL BORON-NITRIDE; TRANSITION-METAL DICHALCOGENIDES; BLACK PHOSPHORUS TRANSISTORS; INVERSION-LAYER THICKNESS; HIGH-QUALITY MONOLAYER; VAPOR-PHASE GROWTH; MOS2 ATOMIC LAYERS; HIGH-PERFORMANCE; MOLYBDENUM-DISULFIDE;
D O I
10.1016/j.nantod.2016.08.009
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two dimensional (2D) van der Waals (vdW) nanosheet semiconductors have recently attracted much attention from researchers because of their potentials as active device materials toward future nano electronics and - optoelectronics. This review focuses on the performance and applications of stateof-the-art vdW 2D material devices which use transition metal dichalcogenides, graphene, hexagonal boron nitride (h-BN), and black phosphorous: field effect transistors (FETs), complementary metal oxide semiconductor (CMOS) inverters, Schottky diode, and PN diode. High mobility in FETs, electrical switching dynamics in CMOS inverter, photovoltaic switching for dynamic energy harvesting in PN diode, and high current driving FETs for organic light emitting diode pixel switching are demonstrated, however, remaining important issues for future electronics and photonics applications are also introduced. As a final contribution of this review, the ultimate orientations for future applications of 2D devices are forecasted and suggested, which are toward ubiquitous electronics to be a part of internet of things as integrated with existing semiconductor devices. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码:626 / 643
页数:18
相关论文
共 197 条
  • [1] Two-dimensional flexible nanoelectronics
    Akinwande, Deji
    Petrone, Nicholas
    Hone, James
    [J]. NATURE COMMUNICATIONS, 2014, 5
  • [2] Atomically thin hexagonal boron nitride probed by ultrahigh-resolution transmission electron microscopy
    Alem, Nasim
    Erni, Rolf
    Kisielowski, Christian
    Rossell, Marta D.
    Gannett, Will
    Zettl, A.
    [J]. PHYSICAL REVIEW B, 2009, 80 (15):
  • [3] Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition
    Amani, Matin
    Chin, Matthew L.
    Birdwell, A. Glen
    O'Regan, Terrance P.
    Najmaei, Sina
    Liu, Zheng
    Ajayan, Pulickel M.
    Lou, Jun
    Dubey, Madan
    [J]. APPLIED PHYSICS LETTERS, 2013, 102 (19)
  • [4] [Anonymous], 2014, INT TECHNOLOGY ROADM
  • [5] ELECTRONIC-STRUCTURE OF BLACK PHOSPHORUS IN SELF-CONSISTENT PSEUDOPOTENTIAL APPROACH
    ASAHINA, H
    SHINDO, K
    MORITA, A
    [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (04) : 1193 - 1199
  • [6] Air-Stable Transport in Graphene-Contacted, Fully Encapsulated Ultrathin Black Phosphorus-Based Field-Effect Transistors
    Avsar, Ahmet
    Vera-Marun, Ivan J.
    Tan, Jun You
    Watanabe, Kenji
    Taniguchi, Takashi
    Castro Neto, Antonio H.
    Oezyilmaz, Barbaros
    [J]. ACS NANO, 2015, 9 (04) : 4138 - 4145
  • [7] Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2
    Baugher, Britton W. H.
    Churchill, Hugh O. H.
    Yang, Yafang
    Jarillo-Herrero, Pablo
    [J]. NANO LETTERS, 2013, 13 (09) : 4212 - 4216
  • [8] Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials
    Bernardi, Marco
    Palummo, Maurizia
    Grossman, Jeffrey C.
    [J]. NANO LETTERS, 2013, 13 (08) : 3664 - 3670
  • [9] Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
    Bertolazzi, Simone
    Krasnozhon, Daria
    Kis, Andras
    [J]. ACS NANO, 2013, 7 (04) : 3246 - 3252
  • [10] Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films
    Britnell, L.
    Ribeiro, R. M.
    Eckmann, A.
    Jalil, R.
    Belle, B. D.
    Mishchenko, A.
    Kim, Y. -J.
    Gorbachev, R. V.
    Georgiou, T.
    Morozov, S. V.
    Grigorenko, A. N.
    Geim, A. K.
    Casiraghi, C.
    Castro Neto, A. H.
    Novoselov, K. S.
    [J]. SCIENCE, 2013, 340 (6138) : 1311 - 1314