High Energy Resolution CdTe Schottky Diode γ-Ray Detectors

被引：0

作者：

Kosyachenko, V. L. A. ^{[1
]}

Aoki, T. ^{[2
]}

Lambropoulos, C. P. ^{[3
]}

Gnatyuk, V. A. ^{[4
]}

Grushko, E. V. ^{[1
]}

Sklyarchuk, V. M. ^{[1
]}

Maslyanchuk, O. L. ^{[1
]}

Sklyarchuk, O. F. ^{[1
]}

Koike, A. ^{[5
]}

机构：

[1] Yury Fedkovych Chernivtsi Natl Univ, Chernovtsy, Ukraine

[2] Shizuoka Univ, Res Inst Elect, Hamamatsu, Shizuoka 4228017, Japan

[3] Technol Educ Inst Chalkida, Psahna 34400, Evia, Greece

[4] Natl Acad Sci Ukraine, VE Lashkaryov Inst Semicond Phys, UA-01601 Kiev, Ukraine

[5] ANSeeN Inc, Hamamatsu, Shizuoka 4328011, Japan

来源：

2012 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE RECORD (NSS/MIC) | 2012年

关键词：

HARD X-RAY; THM GROWTH; CDZNTE; PERFORMANCE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Schottky diode X/gamma-ray detectors based on semi-insulating Cl-doped CdTe crystals have been developed and investigated. Both the Schottky and Ohmic contacts were formed by vacuum deposition of Ni electrodes on the opposite faces of (111) oriented CdTe crystals pre-treated by Ar ion bombardment with different parameters. Record-low leakage current in the fabricated Ni/CdTe/Ni structure at high voltages (similar to 5 nA at 300 K for the area of 10 mm(2) at bias voltage of 1500 V) was achieved that was caused by the charge transport mechanisms which were interpreted on the basis of known theoretical models. The developed detectors have shown the record-high energy resolution in the measurements of the spectra of Cs-137 and Co-57 isotopes (FWHM of 0.42% and 0.49%, respectively). From a comparison of the spectra taken with the detector irradiated from the Schottky contact side and from the opposite side with an Ohmic contact, the concentration of uncompensated impurities (defects) in the CdTe crystals has been determined. The obtained value has been found to be close to the optimal one.

引用

页码：4156 / 4164

页数：9

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