U-shaped Reconfigurable Field-effect Transistor

被引：3

作者：

Wee, Daehoon ^{[1
]}

Kwon, Hui Tae ^{[1
]}

Lee, Won Joo ^{[1
]}

Choi, Hyun-Seok ^{[1
]}

Park, Yu Jeong ^{[1
]}

Kim, Boram ^{[1
]}

Kim, Yoon ^{[1
]}

机构：

[1] Pusan Natl Univ, Coll Nanosci & Nanotechnol, Dept Nanoenergy Engn, Busan 42641, South Korea

来源：

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2019年 / 19卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

3-D MOSFET; reconfigurable filed-effect transistor (RFET); vertically stacked gates;

D O I：

10.5573/JSTS.2019.19.1.063

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a novel reconfigurable field-effect transistor (RFET) featuring two vertically-stacked gates and a U-shaped nanowire channel. Conventional RFETs have a relatively large unit cell size due to their configuration with multiple gates. However, the proposed device can solve this inherent disadvantage of RFET. In addition, it can have a long enough channel without additional area, so that excellent characteristics can be obtained without the short channel effects. The characteristics of the proposed device were examined by 3-D technology computer-aided design (TCAD) device simulation. The effect of some device parameters on the device performance were investigated. Also, the fabrication method is proposed.

引用

页码：63 / 68

页数：6

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