Control of the magnetic domain wall propagation in Pt/Co/Pt ultra thin films using direct mechanical AFM lithography

被引：10
作者：
Schumacher, HW
Ravelosona, D
Cayssol, F
Wunderlich, J
Chappert, C
Mathet, V
Thiaville, A
Jamet, JP
Ferré, J
Haug, RJ
机构：
[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France
[2] Univ Paris 11, Phys Solides Lab, CNRS, UMR 8602, F-91405 Orsay, France
[3] Leibniz Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2002年 / 240卷 / 1-3期
关键词：
domain wall pinning; scanning probe lithography; extraordinary hall effect; magnetic ultra thin films; perpendicular anisotropy;
D O I：
10.1016/S0304-8853(01)00727-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We create mesoscopic point and line defects by scanning probe lithography to control the magnetization reversal process in Pt/Co/Pt ultra thin film. devices. The domain wall propagation near the defects is studied by the Kerr microscopy and extraordinary Hall effect measurements. The observed domain wall pinning is used to block and channel the domain expansion and to create artificial domain patterns. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：53 / 56
页数：4
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