Reduction in intermediate layer thickness of CoCrPt-SiO2 perpendicular recording media by using Ru-SiO2

被引：22

作者：

Takekuma, I. ^{[1
]}

Araki, R. ^{[1
]}

Igarashi, M. ^{[1
]}

Nemoto, H. ^{[1
]}

Tamai, I. ^{[1
]}

Hirayama, Y. ^{[1
]}

Hosoe, Y. ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Odawara, Kanagawa 2568510, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 08期

关键词：

D O I：

10.1063/1.2177128

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A Ru-SiO2 intermediate layer was introduced between the Ru and recording layers to reduce the intermediate layer thickness of CoCrPt-SiO2 perpendicular recording media. A structural analysis revealed that the Ru-SiO2 intermediate layer enhanced the oxide segregation in the initial growth region of the recording layer. A micromagnetic simulation and magnetic property measurements indicated that the Ru-SiO2 intermediate layer reduced the intergranular exchange coupling in the initial growth region of the recording layer without magnetic anisotropy degradation. We reduced the intermediate layer thickness down to 9.1 nm by using the Ru-SiO2 intermediate layer while maintaining the signal-to-noise ratio. (C) 2006 American Institute of Physics.

引用

页数：3

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