Influence of annealing temperature on the photoelectric gas sensing of Fe-doped ZnO under visible light irradiation

被引:39
作者
Han, Lina [1 ]
Wang, DeJun [1 ]
Lu, Yongchun [1 ]
Jiang, Tengfei [1 ]
Chen, Liping [1 ]
Xie, Tengfeng [1 ]
Lin, Yanhong [1 ]
机构
[1] Jilin Univ, Coll Chem, Changchun 130012, Peoples R China
基金
中国国家自然科学基金;
关键词
Gas sensor; Visible light-illumination; Fe-doped ZnO; Room temperature; Annealing temperature; OPTICAL-PROPERTIES; SENSOR; CO; SENSITIVITY; NANORODS; OXYGEN; PROPERTY; OXIDE;
D O I
10.1016/j.snb.2012.10.096
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Fe-doped ZnO are fabricated by hydrothermal method. The influence of the annealing temperature on structural and photoelectric property was studied by X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-vis diffuse reflectance spectra (UV-vis DRS). Visible light-illumination room-temperature gas sensing to formaldehyde based on Fe-doped ZnO annealed at different temperatures was subsequently investigated by the surface photocurrent spectra and gas sensor characterization system, respectively. Accompanying with increasing annealing temperature from 400 degrees C to 600 degrees C, the response to formaldehyde was enhanced due to the increase in crystal quality and active sites on the surface of Fe-doped ZnO. However, when the annealing temperature goes over 700 degrees C, the phase of ZnFe2O4 was observed from XRD pattern. The existence of ZnFe2O4 hindered the transfer of photo-generated carriers and decreased the amount of surface active sites. As a result, the photoelectric gas response for formaldehyde was weaken to some extent. Our results demonstrated that annealing temperature is a very important parameter in the determination of the sensitivity of photoelectric gas sensing based on Fe-doped ZnO. (c) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:34 / 40
页数:7
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