Probing hot electron transport across an epitaxial Schottky interface of SrRuO3/Nb:SrTiO3

被引：9

作者：

Roy, S. ^{[1
]}

Kamerbeek, A. M. ^{[1
]}

Rana, K. G. ^{[1
]}

Parui, S. ^{[1
]}

Banerjee, T. ^{[1
]}

机构：

[1] Univ Groningen, Zernike Inst Adv Mat, Groningen, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 19期

关键词：

EMISSION MICROSCOPY; OXIDE; SRRUO3; FILMS;

D O I：

10.1063/1.4807017

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SrRuO3 (SRO), a conducting transition metal oxide, is commonly used for engineering domains in BiFeO3. Oxide devices can be envisioned by integrating SRO with an oxide semiconductor as Nb doped SrTiO3 (Nb:STO). Using a three-terminal device configuration, we study vertical transport in a SRO/Nb:STO device at the nanoscale and find local differences in transport which originate due to the high selectivity of SRO growth on the underlying surface terminations in Nb:STO. This causes a change in the interface energy band characteristics and is explained by the differences in the spatial distribution of the interface-dipoles at the local Schottky interface. (C) 2013 AIP Publishing LLC.

引用

页数：5

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