Characteristics of a field plate connected to T-shaped gate in AlGaN/GaN HEMTs

被引：3

作者：

Cho, Kyu Jun ^{[1
]}

Ahn, Ho Kyun ^{[1
]}

Kim, Sung Il ^{[1
]}

Kang, Dong Min ^{[1
]}

Lee, Jong Min ^{[1
]}

Min, Byoung Gue ^{[1
]}

Lee, Sang Heung ^{[1
]}

Kim, Dong Yung ^{[1
]}

Yoon, Hyung Sup ^{[1
]}

Kim, Hae Cheon ^{[1
]}

Lee, Kyung Ho ^{[1
]}

Ju, Chul Won ^{[1
]}

Lim, Jong Won ^{[1
]}

Kwon, Yong Hwan ^{[1
]}

Nam, Eun Soo ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Components & Mat Res Lab, Taejon 305700, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2015年 / 67卷 / 04期

关键词：

GaN; HEMT; Field plate; T-shaped gate; Breakdown voltage; BREAKDOWN VOLTAGE; SURFACE PASSIVATION; ENHANCEMENT;

D O I：

10.3938/jkps.67.682

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An AlGaN/GaN high electron mobility transistor (HEMT) with a T-shaped gate employing a gate-foot-connected field plate is presented. Similar to other devices with gate connected field plates the device described in this paper is a variation of the I"-shaped gate with the "head" of the Tshaped gate attached at the top. The proposed device has a higher breakdown voltage and a lower leakage current due to the attached field plate while maintaining the advantages of the T-shaped gate structure, which are a low gate resistance and a low noise level. In addition, the field plate deposition step during the fabrication process involves a partial covering of the "foot" of the gate which showed a possibility for a gate length reduction.

引用

页码：682 / 686

页数：5

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