Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose

被引：84

作者：

Goiffon, Vincent ^{[1
]}

Estribeau, Magali ^{[1
]}

Marcelot, Olivier ^{[1
]}

Cervantes, Paola ^{[1
]}

Magnan, Pierre ^{[1
]}

Gaillardin, Marc ^{[2
]}

Virmontois, Cedric ^{[1
]}

Martin-Gonthier, Philippe ^{[1
]}

Molina, Romain ^{[1
]}

Corbiere, Franck ^{[1
]}

Girard, Sylvain ^{[3
]}

Paillet, Philippe ^{[2
]}

Marcandella, Claude ^{[2
]}

机构：

[1] Univ Toulouse, Image Sensor Res Team, ISAE, F-31055 Toulouse, France

[2] DIF, DAM, CEA, F-91297 Arpajon, France

[3] Univ St Etienne, UMR CNRS 5516, Lab H Curien, St Etienne, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2012年 / 59卷 / 06期

关键词：

Active pixel sensors; CMOS image sensors; Dark current; Interface states; Ionizing radiation; Radiation effects; Radiation hardening; trapped charge; 4T pixel; active pixel sensor; APS; buried photodiode; charge transfer; CMOS image sensor (CIS); dark current; deep submicron process; DSM; interface states; ionizing radiation; MAPS; monolithic active pixel sensor; photon transfer curve (PTC); pinned photodiode (PPD); pinning voltage; pre-metal dielectrics (PMD); quantum efficiency; radiation hardening; RHBD; shallow trench isolation (STI); total ionizing dose (TID); DEEP-SUBMICRON TECHNOLOGY; VOLTAGE;

D O I：

10.1109/TNS.2012.2222927

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO2). In addition to the usually reported dark current increase and quantum efficiency drop at short wavelengths, several original radiation effects are shown: an increase of the pinning voltage, a decrease of the buried photodiode full well capacity, a large change in charge transfer efficiency, the creation of a large number of Total Ionizing Dose (TID) induced Dark Current Random Telegraph Signal (DC-RTS) centers active in the photodiode (even when the Transfer Gate (TG) is accumulated) and the complete depletion of the Pre-Metal Dielectric (PMD) interface at the highest TID leading to a large dark current and the loss of control of the TG on the dark current. The proposed mechanisms at the origin of these degradations are discussed. It is also demonstrated that biasing (i.e., operating) the PPD CIS during irradiation does not enhance the degradations compared to sensors grounded during irradiation.

引用

页码：2878 / 2887

页数：10

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