Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose

被引：83

作者：

Goiffon, Vincent ^{[1
]}

Estribeau, Magali ^{[1
]}

Marcelot, Olivier ^{[1
]}

Cervantes, Paola ^{[1
]}

Magnan, Pierre ^{[1
]}

Gaillardin, Marc ^{[2
]}

Virmontois, Cedric ^{[1
]}

Martin-Gonthier, Philippe ^{[1
]}

Molina, Romain ^{[1
]}

Corbiere, Franck ^{[1
]}

Girard, Sylvain ^{[3
]}

Paillet, Philippe ^{[2
]}

Marcandella, Claude ^{[2
]}

机构：

[1] Univ Toulouse, Image Sensor Res Team, ISAE, F-31055 Toulouse, France

[2] DIF, DAM, CEA, F-91297 Arpajon, France

[3] Univ St Etienne, UMR CNRS 5516, Lab H Curien, St Etienne, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2012年 / 59卷 / 06期

关键词：

Active pixel sensors; CMOS image sensors; Dark current; Interface states; Ionizing radiation; Radiation effects; Radiation hardening; trapped charge; 4T pixel; active pixel sensor; APS; buried photodiode; charge transfer; CMOS image sensor (CIS); dark current; deep submicron process; DSM; interface states; ionizing radiation; MAPS; monolithic active pixel sensor; photon transfer curve (PTC); pinned photodiode (PPD); pinning voltage; pre-metal dielectrics (PMD); quantum efficiency; radiation hardening; RHBD; shallow trench isolation (STI); total ionizing dose (TID); DEEP-SUBMICRON TECHNOLOGY; VOLTAGE;

D O I：

10.1109/TNS.2012.2222927

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO2). In addition to the usually reported dark current increase and quantum efficiency drop at short wavelengths, several original radiation effects are shown: an increase of the pinning voltage, a decrease of the buried photodiode full well capacity, a large change in charge transfer efficiency, the creation of a large number of Total Ionizing Dose (TID) induced Dark Current Random Telegraph Signal (DC-RTS) centers active in the photodiode (even when the Transfer Gate (TG) is accumulated) and the complete depletion of the Pre-Metal Dielectric (PMD) interface at the highest TID leading to a large dark current and the loss of control of the TG on the dark current. The proposed mechanisms at the origin of these degradations are discussed. It is also demonstrated that biasing (i.e., operating) the PPD CIS during irradiation does not enhance the degradations compared to sensors grounded during irradiation.

引用

页码：2878 / 2887

页数：10

共 50 条

[21] Analysis of Total Dose-Induced Dark Current in CMOS Image Sensors From Interface State and Trapped Charge Density Measurements [J].

Goiffon, V. ;

Virmontois, C. ;

Magnan, P. ;

Girard, S. ;

Paillet, P. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (06) :3087-3094

[22] Proton and Gamma Radiation Effects on a Fully Depleted Pinned Photodiode CMOS Image Sensor [J].

Meng, Xiao ;

Stefanov, Konstantin D. ;

Holland, Andrew D. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 67 (06) :1107-1113

[23] Degradation of CMOS APS Image Sensors Induced by Total Ionizing Dose Radiation at Different Dose Rates and Biased Conditions [J].

Wang Zujun ;

Liu Changju ;

Ma Yan ;

Wu Zhijun ;

Wang Ying ;

Tang Benqi ;

Liu Minbo ;

Liu Zhiyong .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (02) :527-533

[24] Total ionizing dose effects on CMOS image sensors with deep-trench isolation [J].

Ahmed, Nayera ;

Lu, Guo-Neng ;

Roy, Francois .

MATERIALS AND APPLICATIONS FOR SENSORS AND TRANSDUCERS III, 2014, 605 :453-456

[25] High Total Ionizing Dose Effects on Backside-Illuminated CMOS Image Sensors [J].

Liu, Bingkai ;

Li, Yudong ;

Wen, Lin ;

Feng, Jie ;

Cai, Yulong ;

Guo, Qi .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2024, 71 (11) :2393-2399

[26] Analysis of Charge Transfer Potential Barrier in Pinned Photodiode of CMOS Image Sensors [J].

Khan, Uzma ;

Sarkar, Mukul .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (06) :2770-2777

[27] A Review of the Pinned Photodiode for CCD and CMOS Image Sensors [J].

Fossum, Eric R. ;

Hondongwa, Donald B. .

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2014, 2 (03) :33-43

[28] Annealing Effects on Radiation-Hardened CMOS Image Sensors Exposed to Ultrahigh Total Ionizing Doses [J].

Dewitte, H. ;

Rizzolo, S. ;

Paillet, P. ;

Magnan, P. ;

Le Roch, A. ;

Corbiere, F. ;

Molina, R. ;

Girard, S. ;

Allanche, T. ;

Muller, C. ;

Desjonqueres, H. ;

Mace, J. -R. ;

Baudu, J. -P. ;

Flores, A. Saravia ;

Goiffon, V. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 67 (07) :1284-1292

[29] Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels [J].

Rizzolo, Serena ;

Goiffon, Vincent ;

Corbiere, Franck ;

Molina, Romain ;

Chabane, Aziouz ;

Girard, Sylvain ;

Paillet, Philippe ;

Magnan, Pierre ;

Boukenter, Aziz ;

Allanche, Timothe ;

Muller, Cyprien ;

Monsanglant-Louvet, Celine ;

Osmond, Melanie ;

Desjonqueres, Hortense ;

Mace, Jean-Reynald ;

Burnichon, Pierre ;

Baudu, Jean-Pierre ;

Plumeri, Stephane .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 66 (01) :111-119

[30] Analytical Modeling of Charge Behavior in Pinned Photodiode for CMOS Image Sensors [J].

Hu, Congzhen ;

Zhang, Bing ;

Xin, Youze ;

Xie, Yiyun ;

Hu, Pengfei ;

Geng, Li .

IEEE SENSORS JOURNAL, 2023, 23 (13) :14295-14303

← 1 2 3 4 5 →