Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose

被引：85

作者：

Goiffon, Vincent ^{[1
]}

Estribeau, Magali ^{[1
]}

Marcelot, Olivier ^{[1
]}

Cervantes, Paola ^{[1
]}

Magnan, Pierre ^{[1
]}

Gaillardin, Marc ^{[2
]}

Virmontois, Cedric ^{[1
]}

Martin-Gonthier, Philippe ^{[1
]}

Molina, Romain ^{[1
]}

Corbiere, Franck ^{[1
]}

Girard, Sylvain ^{[3
]}

Paillet, Philippe ^{[2
]}

Marcandella, Claude ^{[2
]}

机构：

[1] Univ Toulouse, Image Sensor Res Team, ISAE, F-31055 Toulouse, France

[2] DIF, DAM, CEA, F-91297 Arpajon, France

[3] Univ St Etienne, UMR CNRS 5516, Lab H Curien, St Etienne, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2012年 / 59卷 / 06期

关键词：

Active pixel sensors; CMOS image sensors; Dark current; Interface states; Ionizing radiation; Radiation effects; Radiation hardening; trapped charge; 4T pixel; active pixel sensor; APS; buried photodiode; charge transfer; CMOS image sensor (CIS); dark current; deep submicron process; DSM; interface states; ionizing radiation; MAPS; monolithic active pixel sensor; photon transfer curve (PTC); pinned photodiode (PPD); pinning voltage; pre-metal dielectrics (PMD); quantum efficiency; radiation hardening; RHBD; shallow trench isolation (STI); total ionizing dose (TID); DEEP-SUBMICRON TECHNOLOGY; VOLTAGE;

D O I：

10.1109/TNS.2012.2222927

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO2). In addition to the usually reported dark current increase and quantum efficiency drop at short wavelengths, several original radiation effects are shown: an increase of the pinning voltage, a decrease of the buried photodiode full well capacity, a large change in charge transfer efficiency, the creation of a large number of Total Ionizing Dose (TID) induced Dark Current Random Telegraph Signal (DC-RTS) centers active in the photodiode (even when the Transfer Gate (TG) is accumulated) and the complete depletion of the Pre-Metal Dielectric (PMD) interface at the highest TID leading to a large dark current and the loss of control of the TG on the dark current. The proposed mechanisms at the origin of these degradations are discussed. It is also demonstrated that biasing (i.e., operating) the PPD CIS during irradiation does not enhance the degradations compared to sensors grounded during irradiation.

引用

页码：2878 / 2887

页数：10

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[11] Total dose effects on CMOS active pixel sensors [J].

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SENSORS AND CAMERA SYSTEMS FOR SCIENTIFIC, INDUSTRIAL AND DIGITAL PHOTOGRAPHY APPLICATIONS, 2000, 3965 :157-167

[12] Dark Current Blooming in Pinned Photodiode CMOS Image Sensors [J].

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Lincelles, Jean-Baptiste ;

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Paillet, Philippe ;

Magnan, Pierre ;

Gilard, Olivier .

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[13] Gamma and Proton-Induced Dark Current Degradation of 5T CMOS Pinned Photodiode 0.18 μm CMOS Image Sensors [J].

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Vaillant, J. ;

Fereyre, P. ;

Prevost, V. ;

Boutillier, M. .

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[14] Pixel Level Characterization of Pinned Photodiode and Transfer Gate Physical Parameters in CMOS Image Sensors [J].

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Michelot, Julien ;

Cervantes, Paola ;

Pelamatti, Alice ;

Marcelot, Olivier ;

Magnan, Pierre .

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2014, 2 (04) :65-76

[15] Overview of Ionizing Radiation Effects in Image Sensors Fabricated in a Deep-Submicrometer CMOS Imaging Technology [J].

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[16] Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor [J].

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Wen, Lin ;

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[17] Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor [J].

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郭旗 .

ChinesePhysicsB, 2018, 27 (10) :356-360

[18] Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode [J].

Place, Sebastien ;

Carrere, Jean-Pierre ;

Allegret, Stephane ;

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Goiffon, Vincent ;

Roy, Francois .

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[19] Fixed Pattern Noise and Temporal Noise Degradation Induced by Radiation Effects in Pinned Photodiode CMOS Image Sensors [J].

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Chen, Wei ;

He, Baoping ;

Yao, Zhibin ;

Ma, Wuying ;

Sheng, Jiangkun .

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[20] Design and characterization of ionizing radiation-tolerant CMOS APS image sensors up to 30 Mrd (Si) total dose [J].

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Chan, TY ;

Fossum, ER ;

Tsai, RH ;

Spagnuolo, R ;

Deily, J ;

Byers, WB ;

Peden, JC .

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